Investigation of gate leakage current in TFET: A semi-numerical approach
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Date
2023-04
Journal Title
Journal ISSN
Volume Title
Type
Article
Publisher
Alexandria University
Series Info
University Alexandria Engineering Journal;
Scientific Journal Rankings
Abstract
Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace con-
ventional MOSFETs in low-power applications. However, there are many challenges that should be
overcome to efficiently operate the TFET. One of the most limiting factors that can restrict the
TFET performance is the gate leakage current. In this paper, the tunneling leakage current through
the gate oxide of double gate TFET has been analyzed. The conduction band energy level for gate-
oxide-silicon was employed to calculate the tunneling transmission coefficient by utilizing a numer-
ical method. To obtain the potential barrier between the gate and the channel surface, a modified
analytical pseudo-2D method has been applied to deduce the corresponding surface potential taking
into account a precise calculation of depletion regions. Furthermore, the inclusion of the image
charge barrier lowering effect is incorporated in calculating the transmission probability through
the oxide. Including such an effect shows a significant influence on determining the gate tunneling
current. The gate leakage current has been calculated for various bias voltages and equivalent oxide
thicknesses. The presented semi-numerical technique shows good agreement within a suitable CPU
time when validated and compared against full numerical TCAD simulation.
2023 The Authors. Published by Elsevier B.V. on behalf of Faculty of Engineering, Alexandria
University
Description
Keywords
TFET;, Gate Leakage Current;, Transmission Line Method (TLM);, Pseudo-2D;, Image Force