Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering
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Date
07/06/2022
Journal Title
Journal ISSN
Volume Title
Type
Article
Publisher
Ain Shams University
Series Info
Ain Shams Engineering Journal;
Scientific Journal Rankings
Abstract
In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has been designed and simulated using a work function engineering technique. An intrinsic CNT is introduced as a channel material and a doped pocket is created between the source and the channel by utilizing an appropriate work function to boost the ON-state current of the device. Moreover, dielectric pocket engineering is applied to boost the high-frequency performance. The simulations, performed in this work, are conducted through a 2D solution of Poisson and Schrodinger equations which are done by utilizing the unbalanced Green function formalism. Simulation results demonstrate that the proposed device structure could improve the ON-current, cut-off frequency, and achieve a low subthreshold swing (SS) value which makes it suitable for low power applications. Additionally, the presented structure could also eliminate ambipolar conduction.
Description
Keywords
Tunneling, CNT, TFET, Electrostatic Doping, Work function engineering, Dielectric engineering