Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering

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Date

07/06/2022

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Journal ISSN

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Article

Publisher

Ain Shams University

Series Info

Ain Shams Engineering Journal;

Abstract

In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has been designed and simulated using a work function engineering technique. An intrinsic CNT is introduced as a channel material and a doped pocket is created between the source and the channel by utilizing an appropriate work function to boost the ON-state current of the device. Moreover, dielectric pocket engineering is applied to boost the high-frequency performance. The simulations, performed in this work, are conducted through a 2D solution of Poisson and Schrodinger equations which are done by utilizing the unbalanced Green function formalism. Simulation results demonstrate that the proposed device structure could improve the ON-current, cut-off frequency, and achieve a low subthreshold swing (SS) value which makes it suitable for low power applications. Additionally, the presented structure could also eliminate ambipolar conduction.

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Keywords

Tunneling, CNT, TFET, Electrostatic Doping, Work function engineering, Dielectric engineering

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