Design and simulation of proposed low cost solar cell structures based on heavily doped silicon wafers

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dc.AffiliationOctober University for modern sciences and Arts (MSA)
dc.contributor.authorSalem M.S.
dc.contributor.authorZekry A.
dc.contributor.authorShaker A.
dc.contributor.authorAbouelatta M.
dc.contributor.otherDepartment of Electrical Comm. and Elec. Systems Eng.
dc.contributor.otherFaculty of Eng.
dc.contributor.otherModern Science and Arts University
dc.contributor.otherCairo
dc.contributor.otherEgypt; Department of Computer Engineering
dc.contributor.otherFaculty of Computer Science
dc.contributor.otherHail University
dc.contributor.otherSaudi Arabia; Department of Elec. and Comm. Eng.
dc.contributor.otherFaculty of Eng.
dc.contributor.otherAin Shams University
dc.contributor.otherCairo
dc.contributor.other11517
dc.contributor.otherEgypt; Department of Eng. Physics and Mathematics
dc.contributor.otherFaculty of Eng.
dc.contributor.otherAin Shams University
dc.contributor.otherCairo
dc.contributor.other11517
dc.contributor.otherEgypt
dc.date.accessioned2020-01-09T20:41:26Z
dc.date.available2020-01-09T20:41:26Z
dc.date.issued2017
dc.descriptionScopus
dc.description.abstractThis paper aims to present the design and simulation of two proposed low cost solar cell structures; namely, pn and npn. Both structures are based on commercially available low cost heavily doped silicon wafers. Their operation relies on the idea of vertical generation and lateral collection of the light generated carriers. A detailed qualitative analysis of both structures is given and verified using advanced TCAD tools. The comparison is analyzed firstly regarding the illuminated IV characteristics. The open circuit voltage (V oc ), short circuit current density (J sc ), fill factor (F.F) and conversion efficiency (? c ) are calculated. Additionally, the optical performance is calculated and compared for both structures. The quantum efficiency, the spectral response and the absorption curve are compared. The presented results show that npn structure gives better electrical and optical performance than the pn one. � 2017 IEEE.en_US
dc.description.sponsorshipNewporten_US
dc.identifier.doihttps://doi.org/10.1109/PVSC.2017.8366551
dc.identifier.isbn9.78E+12
dc.identifier.otherhttps://doi.org/10.1109/PVSC.2017.8366551
dc.identifier.urihttps://ieeexplore.ieee.org/document/7750070
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartofseries2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
dc.subjectConversion Efficiencyen_US
dc.subjectNpnen_US
dc.subjectPnen_US
dc.subjectSILVACOen_US
dc.subjectSolar cellsen_US
dc.subjectConversion efficiencyen_US
dc.subjectCostsen_US
dc.subjectEfficiencyen_US
dc.subjectOpen circuit voltageen_US
dc.subjectSilicon solar cellsen_US
dc.subjectSolar cellsen_US
dc.subjectDesign and simulationen_US
dc.subjectHeavily doped siliconsen_US
dc.subjectIV characteristicsen_US
dc.subjectLight-generated carriersen_US
dc.subjectLow-cost solar cellsen_US
dc.subjectOptical performanceen_US
dc.subjectQualitative analysisen_US
dc.subjectSilvacoen_US
dc.subjectSilicon wafersen_US
dc.titleDesign and simulation of proposed low cost solar cell structures based on heavily doped silicon wafersen_US
dc.typeConference Paperen_US
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