Role of Quasi-Fermi potential in modeling III-V TFETs: InAs as a case study
Date
2022-10
Journal Title
Journal ISSN
Volume Title
Type
Article
Publisher
Ain Shams University
Series Info
Ain Shams Engineering Journal;
Scientific Journal Rankings
Abstract
TFET accurate physically based models are highly required to analyze and predict the device character-
istics for its future utilization in circuits. In order to precisely model TFETs, it is essential to understand
the several aspects related to the physics-based modeling of these devices. Using 2D TCAD simulation, we
showed that in order to appropriately model the electrostatic potential in InAs-based TFETs, the electron
quasi-Fermi potential (eQFP) should be taken to depend on biasing conditions, both VDS and VGS, contrary
to the case of Si-based TFETs in which the eQFP is considered independent of VGS which is widely encoun-
tered in the literature. The study is carried out for InAs double-gate homojunction tunnel FETs (DG-
TFETs). In addition, we applied the main key factor of dependence of eQFP on a modified TFET model
and it is revealed that the interpretation of eQFP correctly predicts the electrostatic potential and the
drain-to-source band to band tunneling current.
2022 THE AUTHORS. Published by Elsevier BV on behalf of Faculty of Engineering, Ain Shams Uni-
versity. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/
by-nc-nd/4.0/).
Description
Keywords
InAs DG-TFET, Physically-based model, Band-to-band tunneling (BTBT), Electron Quasi-Fermi Potential (eQFP)