Browsing by Author "Shaker, A"

Now showing 1 - 6 of 6

Elucidation the effectiveness of acridine orange as light-harvesting layer for photosensing applications: Structural, spectroscopic and electrical investigations
(Elsevier, 2022-11) Salem, Marwa S; Wassel, Ahmed R; Fedawy, M; Shaker, A; Al-Bagawia, Amal H; Alanazi, Adwan; El-Mahalawy, Ahmed M
In this research, acridine orange, AO, bio-photosensitive thin films are prepared using vacuum thermal evapo- ration technique for optoelectronic applications. First, the crystal structure of the deposited films compared to powder is investigated using the XRD technique. Next, the surface morphology of the deposited AO thin film is characterized using the FESEM technique giving rise to a uniform, homogeneous, and granular polycrystalline film. The amplitude and spatial roughness parameters of the film are estimated. Furthermore, the optical properties of the deposited AO thin film are spectrophotometrically characterized in the range from UV to NIR. The recorded absorbance, transmittance, and reflectance showed high UV and visible absorption characteristics with a direct energy gap of ~2.238 eV. The optical constants, including refractive index and extinction coeffi- cient, are found, and the dispersion behavior is analyzed using the one-oscillator model for estimating the oscillator and dispersion energies. The dielectric function and dielectric relaxation time of AO thin film are interpreted in detail. In addition, an organic/inorganic heterogeneous junction based on Ag/AO/p-Si/Al is fabricated and electrically evaluated using the current-voltage relation. The fabricated heterojunction shows a rectification behavior of ideality factor, barrier height, and rectification ratio ~2.09, 0.707 eV, and 176, respectively. The charges dynamics mechanism in terms of band diagram and the density of interface states profile are analyzed. Eventually, the photoresponse of the engineered heterojunction is evaluated under the illumination of intensities that varies from 20 mW/cm2 to 100 mW/cm2 . The fabricated photosensor showed a high stable performance with responsivity, specific detectivity, linear dynamic range, and ON/OFF ratio of about 68.4 mA/W, 1.11 × 1010 Jones, 69.3 dB, and 108.4, respectively. The photoresponse performance of the present device is considered more efficient and stable than many other organic/inorganic photosensors.
Identification of power PIN diode design parameters: Circuit and device-based simulation approach
(Ain Shams University, 3/13/2021) Shaker, A; Salem, M.S; Zekry, A; El-Banna, M; Sayah, G.T; Abouelatta, M
This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations. The second phase is the optimization of the diode parameters considering PSPICE circuit simulation where an electro-thermal physically based circuit model is utilized depending on a series of dynamic and static measurements. The final optimization step is carried out by using TCAD simulations. First, the diode extracted parameters are used to virtually fabricate the diode by using a process simulator. Then, using the output of the process simulator, a device simulator is used to get the desired output that is validated against experimental data. Three case studies for different power diodes are presented showing a good agreement between circuit/device simulation results and measurements. The presented methodology provides high accuracy like TCAD-based parameter extraction procedure with less time. In addition, it gives higher accuracy than the widely used circuit-based parameter extraction technique. © 2021 THE AUTHORS
Integration of biocompatible Coomassie Brilliant Blue dye on silicon in organic/Inorganic heterojunction for photodetection applications
(Elsevier Ltd., 2022-07) Salem, Marwa S; Wassel, Ahmed R; Fedawy, M; Shaker, A; Al-Bagawia, Amal H; Aleid, Ghada Mohamed; El-Mahalawy, Ahmed M
Here, we introduce systematic investigations of structural, morphological, and optical properties of solution- processed coomassie brilliant blue, CBB, thin films for photodetection applications. First, the structural and morphological features of the spin-coated CBB thin films are investigated using XRD and FESEM microscopy and yielded a polycrystalline, nanostructured, and porous CBB film of crystallite size and RMS roughness ~31.95 nm and 10.65 nm, respectively. The UV–Vis–NIR spectrophotometric measurements of transmittance and reflectance elucidated the efficient absorption and light-harvesting of the UV and visible light range with estimated indirect energy gap and Urbach energy ~1.54 eV and 22.3 meV, respectively. Next, the dispersion behavior of the fabricated thin films is analyzed in the light of the single-oscillator model estimating the detail dispersion pa- rameters. Furthermore, the dielectric function, as well as the nonlinear optical parameters, is accurately esti- mated. Subsequently, the microelectronic parameters of the engineered rectifying Ag/CBB/p-Si/Al heterojunction such as ideality factor, barrier height, series, and shunt resistances are estimated at different temperatures. The charges dynamical mechanism and the interface states density profile are analyzed, and the thermionic emission model is confirmed to fit the low bias region with a modified Richardson constant of about 34.8A/cm2 K2 .After that, the photoresponse of the implemented organic/inorganic heterojunction is checked at different illumination intensities and showed a significant stable sensitivity with fast On-Off switching behavior. The fabricated heterojunction achieved good figures of merit such as responsivity, specific detectivity, linear dynamic range, and rise/fall time of about 4.289 mA/W, 2.07 × 109 Jones, 30.36 dB, and 61.6/82.5 ms, respectively. The good and stable responsive performance of the current Ag/CBB/p-Si/Al architecture may make it a potential candidate for photodetection applications
Investigation of gate leakage current in TFET: A semi-numerical approach
(Alexandria University, 2023-04) Tawfik, N.M.S; Shaker, A; Sayed, I; Kamel, H; Salem, M.S; Dessouky, M; Fedawy, M
Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace con- ventional MOSFETs in low-power applications. However, there are many challenges that should be overcome to efficiently operate the TFET. One of the most limiting factors that can restrict the TFET performance is the gate leakage current. In this paper, the tunneling leakage current through the gate oxide of double gate TFET has been analyzed. The conduction band energy level for gate- oxide-silicon was employed to calculate the tunneling transmission coefficient by utilizing a numer- ical method. To obtain the potential barrier between the gate and the channel surface, a modified analytical pseudo-2D method has been applied to deduce the corresponding surface potential taking into account a precise calculation of depletion regions. Furthermore, the inclusion of the image charge barrier lowering effect is incorporated in calculating the transmission probability through the oxide. Including such an effect shows a significant influence on determining the gate tunneling current. The gate leakage current has been calculated for various bias voltages and equivalent oxide thicknesses. The presented semi-numerical technique shows good agreement within a suitable CPU time when validated and compared against full numerical TCAD simulation. 2023 The Authors. Published by Elsevier B.V. on behalf of Faculty of Engineering, Alexandria University
A modified pseudo 2D physically-based model for double-gate TFETs: Role of precise calculations of drain and source depletion regions
(Elsevier, 7/14/2021) Yahia, Yasmin; Salem, Marwa S; Shaker, A; Kamel, H; Abouelatta, M; ElBanna, M
In this current study, a modified pseudo two-dimensional (2-D) semi-analytical model for double gate tunnel FETs (DG-TFETs) is introduced. The main regions in the DG-TFET structure are the channel and the depletion regions inside the source and the drain. In such regions, the 2-D Poisson’s equation is solved by adjusting suitable boundary conditions. The source and the drain depletion region lengths are calcu- lated precisely by an iterative technique resulting in an accurate prediction of the electrostatic potential. According to the obtained 2-D electrostatic potential, the energy band diagram could be extracted and, consequently, the minimum tunneling width is calculated. Accordingly, the model of drain current is introduced by applying Kane’s tunneling model. Further, the source depletion charge and the channel charge are derived, and the terminal capacitance components are then extracted. A comparison between the proposed model and SILVACO TCAD simulations shows a satisfactory agreement that confirms the validation of the presented model robustness. 2021 THE AUTHORS. Published by Elsevier BV on behalf of Faculty of Engineering, Ain Shams Uni- versity. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/ by-nc-nd/4.0/).
Thirteen-level modified packed u-cell multilevel inverter for renewable-energy applications
(Institute of Electrical and Electronics Engineers Inc., 9/15/2020) Fouda, S; Salem, M.S; Saeed, A; Shaker, A; Abouelatta, M
Mushrooms have a significant role in human diet as functional food and as a nutraceutical resource. The combination of its umami flavor, protein, vitamins, minerals and carbohydrates has meant that mushrooms could be considered a cheap food source for a long time in many countries. Moreover, mushrooms contain an excellent variety of bioactive metabolites that can be successful in both prevention and treatment of various human health hazards. In addition, extracts from medicinal mushrooms and their metabolites have been verified for wound treating with contribution to different mechanisms of the healing process. This review summarizes the nutritional value and composition of mushrooms, ethnobiology and ethnopharmacology, and wound healing potential. © Copyright © 2020 Sharifi-Rad, Butnariu, Ezzat, Adetunji, Imran, Sobhani, Tufail, Hosseinabadi, Ramírez-Alarcón, Martorell, Maroyi and Martins.