Browsing by Author "Salem, Marwa"

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Gate-on-Source TFET Analytical Model: Role of Mobile Charges and Depletion Regions
(Institute of Electrical and Electronics Engineers Inc., 25/10/2021) Eliwy, Mahmoud; Elgamal, Muhammad; Salem, Marwa; Fedawy, Mostafa; Shaker, Ahmed
This study presents a 2-D analytical model for the double gate tunnel FET (DG-TFET). The model considers the gate-on-source overlap that may occur intentionally or unintentionally due to fabrication tolerances. The 2-D Poisson's equation is solved in the main four regions of the structure, namely, the source, channel, drain, and the overlapped region inside the source. The mobile charge inside the channel is taken into consideration. In addition, the source and the drain depletion region lengths are precisely calculated by an iterative technique. Such crucial assumptions and calculations result in accurate expectations of the electrostatic potential. The energy band diagram could be extracted according to the obtained electrostatic potential, and, subsequently, the minimum tunneling width is computed. The impact of channel length and the overlap distance is thoroughly investigated. The results of the proposed model and Silvaco TCAD simulations are compared. The comparison satisfies a good agreement that verifies the validity of the presented model. © 2021 IEEE.
Influence of base doping level on the npn microstructure solar cell performance: A TCAD study
(Elsevier B.V., 2021-11) Salem, Marwa; Zekry, A; Abouelatta, M; Alshammari, Mohammad T; Alanazi, Adwan; Al-Dhlan, Kawther A; A.Shaker, A
Optical Materials Volume 121, November 2021, 111501 Short Communication Influence of base doping level on the npn microstructure solar cell performance: A TCAD study Author links open overlay panelMarwaSalemabA.ZekrycM.AbouelattacMohammad T.AlshammaridAdwanAlanazidKawther A.Al-DhlandA.Shakere a Department of Computer Engineering, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia b Department of Electrical Communication and Electronics Systems Engineering, Faculty of Engineering, Modern Science and Arts University (MSA), Cairo, Egypt c Department of Electronics and Communications, Faculty of Engineering, Ain Shams University, Cairo, Egypt d Department of Computer science and information, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia e Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo, Egypt Received 5 April 2021, Revised 16 August 2021, Accepted 18 August 2021, Available online 24 August 2021. crossmark-logo https://doi.org/10.1016/j.optmat.2021.111501 Get rights and content Highlights • Device simulation of proposed npn microstructure solar cell was comprehensively performed. • The impact of base high doping on the device performance was fully discussed. • The results show that for NB ranging from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively. • For base doping ranging from 5×1017 cm-3 to 2×1019 cm-3, a competitive efficiency is 15.4% to 9%, respectively. Abstract Silicon industry has a mature learning curve which is the driver for 90% share of the PV market. Yet, the cost/m2 of the planar crystalline silicon solar cell is still high. To reduce the cost of silicon-based solar cells, heavily doped wafers can be used in a proposed npn microstructure in which photoexcited carries are vertically generated while the collection of carriers is accomplished in the lateral direction. In this work, we report on the influence of the heavily p + base doping concentration, Na, on the performance of the cell for different base widths. All simulations are performed by using SILVACO TCAD under AM1.5 illumination. The results show that for Na extending from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively.
Role of Quasi-Fermi potential in modeling III-V TFETs: InAs as a case study
(Ain Shams University, 2022-10) Shaker, Ahmed; Sayed, Islam; Abouelatta, Mohamed; Fikry, Wael; Salem, Marwa; El-Banna, Mohamed
TFET accurate physically based models are highly required to analyze and predict the device character- istics for its future utilization in circuits. In order to precisely model TFETs, it is essential to understand the several aspects related to the physics-based modeling of these devices. Using 2D TCAD simulation, we showed that in order to appropriately model the electrostatic potential in InAs-based TFETs, the electron quasi-Fermi potential (eQFP) should be taken to depend on biasing conditions, both VDS and VGS, contrary to the case of Si-based TFETs in which the eQFP is considered independent of VGS which is widely encoun- tered in the literature. The study is carried out for InAs double-gate homojunction tunnel FETs (DG- TFETs). In addition, we applied the main key factor of dependence of eQFP on a modified TFET model and it is revealed that the interpretation of eQFP correctly predicts the electrostatic potential and the drain-to-source band to band tunneling current. 2022 THE AUTHORS. Published by Elsevier BV on behalf of Faculty of Engineering, Ain Shams Uni- versity. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/ by-nc-nd/4.0/).