Browsing by Author "Almurayziq, Tariq S"

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Numerical analysis of hole transport layer-free antimony selenide solar cells: Possible routes for efficiency promotion
(Elsevier, 2022-07) Salem, Marwa S; Shaker, Ahmed; Abouelatta, M; Alanazi, Adwan; Al-Dhlan, Kawther A; Almurayziq, Tariq S
Amongst the numerous absorbers confronted in thin-film solar cell technology, antimony selenide (Sb2Se3) is regarded as an extremely promising contender as it is a non-toxic and earth-abundant besides its high-level absorption coefficient. To boost the power conversion efficiency (PCE) of Sb2Se3 solar cells, we report some design recommendations by utilizing device simulation. The device model is firstly validated by calibration of an experimental cell having a configuration of FTO/CdS/Sb2Se3/Spiro-OMeTAD/Au. Then, the optimization of a hole transport layer (HTL) free structure is carried out by tuning the conduction band offset between the electron transport layer (ETL) and the Sb2Se3 absorber and by inspecting the key absorber parameters to get the maximum available power conversion efficiency. In this context, the ternary compound material ZnMgO is found to match the optimum band alignment. Moreover, the impact of ETL parameters, like thickness, doping, and surface treatment by ammonia etching, has been analyzed to understand its underlying physics and to provide possible ways for device efficiency promotion. All simulations, conducted in this paper, are accomplished by SCAPS device simulation software under standard one Sun (AM1.5G, 100 mW/cm2) illumination at 300 K.
Performance Improvement of npn Solar Cell Microstructure by TCAD Simulation: Role of Emitter Contact and ARC
(Multidisciplinary Digital Publishing Institute (MDPI), 2022-09) Marwa S, Salem; Zekry, Abdelhalim; Shaker, Ahmed; Abouelatta, Mohamed; Almurayziq, Tariq S; Alshammari, Mohammad T; El-Banna, Mohamed M
In the current study, the performance of the npn solar cell (SC) microstructure is improved by inspecting some modifications to provide possible paths for fabrication techniques of the structure. The npn microstructure is simulated by applying a process simulator by starting with a heavily doped p-type substrate which could be based on low-cost Si wafers. After etching deep notches through the substrate and forming the emitter by n-type diffusion, an aluminum layer is deposited to form the emitter electrode with about 0.1 µm thickness; thereby, the notches are partially filled. This nearly-open-notches microstructure, using thin metal instead of filling the notch completely with Al, gives an efficiency of 15.3%, which is higher than the conventional structure by 0.8%. Moreover, as antireflection coating (ARC) techniques play a crucial role in decreasing the front surface reflectivity, we apply different ARC schemes to inspect their influence on the optical performance. The influence of utilizing single layer (ZnO), double (Si3N4/ZnO), and triple (SiO2/Si3N/ZnO) ARC systems is investigated, and the simulation results are compared. The improvement in the structure performance because of the inclusion of ARC is evaluated by the relative change in the efficiency (∆η). In the single, double, and triple ARC, ∆η is found to be 12.5%, 15.4%, and 17%, respectively. All simulations are performed by using a full TCAD process and device simulators under AM1.5 illumination.
Performance Investigation of a Proposed Flipped npn Microstructure Silicon Solar Cell Using TCAD Simulation
(Multidisciplinary Digital Publishing Institute (MDPI), 2022-07) Salem, Marwa S; Zekry, Abdelhalim; Shaker, Ahmed; Abouelatta, Mohamed; ElBanna, Mohamed M; Almurayziq, Tariq S; Ramadan, Rabie A; Alshammari, Mohammad T
This work aims at inspecting the device operation and performance of a novel flipped npn microstructure solar cell based on low-cost heavily doped silicon wafers. The flipped structure was designed to eliminate the shadowing effect as applied in the conventional silicon-based interdigitated back-contact cell (IBC). Due to the disappearance of the shadowing impact, the optical performance and short-circuit current density of the structure have been improved. Accordingly, the cell power conversion efficiency (PCE) has been improved in comparison to the conventional npn solar cell microstructure. A detailed analysis of the flipped npn structure was carried out in which we per- formed TCAD simulations for the electrical and optical performance of the flipped cell. Additionally, a comparison between the presented flipped microstructure and the conventional npn solar cell was accomplished. The PCE of the conventional npn structure was found to be 14.5%, while it was about 15% for the flipped structure when using the same cell physical parameters. Furthermore, the surface recombination velocity and base bulk lifetime, which are the most important recombination parameters, were studied to investigate their influence on the flipped microstructure performance. An efficiency of up to 16% could be reached when some design parameters were properly fine-tuned. Moreover, the impact of the different physical models on the performance of the proposed cell was studied, and it was revealed that band gap narrowing effect was the most significant factor limiting the open-circuit voltage. All the simulations accomplished in this analysis were carried out using the SILVACO TCAD process and device simulators.
Prospective efficiency boosting of full-inorganic single-junction Sb2(S, Se)3 solar cell
(Elsevier BV, 2022-09) Salem, Marwa S; Shaker, Ahmed; Almurayziq, Tariq S; Alshammari, Mohammad T
Antimony selenosulfide, Sb2(S, Se)3, is regarded as an appropriate absorber to be utilized in terrestrial single junction solar cell applications thanks to the tunability of its bandgap energy which could be adjusted around 1.3 eV. To enhance the power conversion efficiency (PCE) of Sb2(S, Se)3-based single junction solar cell, we propose some design recommendations by using device simulation. First, in order to validate the simulation model, a calibration step is accomplished by comparing the numerical simulation results with those of a fabricated cell structure consisting of Au/Sb2(S, Se)3/CdS/ITO. The designed cell is formed without an organic hole transport layer (HTL) which, generally, harmfully affects the cell by causing stability issues. Next, we investigate the impact of the conduction band offset (CBO) between the electron transport layer (ETL) and the Sb2(S, Se)3 absorber utilizing the bandgap tunable material Cd1-xZnxS to achieve the optimum CBO. Various key design parameters for the presented cell such as the back contact work function as well as absorber thickness and doping concentration are also inspected. It is found that the most crucial parameter that affects the cell performance is the CBO which could be adjusted by modifying the Zn fraction in the ternary compound Cd1-xZnxS. Moreover, a study on the impact of the interface and bulk defects on device performance is carried out. The simulations, conducted in this study, are accomplished by SCAPS-1D simulator at 300 K temperature and under AM1.5G illumination.