Browsing by Author "Aleid, Ghada Mohamed"

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Integration of biocompatible Coomassie Brilliant Blue dye on silicon in organic/Inorganic heterojunction for photodetection applications
(Elsevier Ltd., 2022-07) Salem, Marwa S; Wassel, Ahmed R; Fedawy, M; Shaker, A; Al-Bagawia, Amal H; Aleid, Ghada Mohamed; El-Mahalawy, Ahmed M
Here, we introduce systematic investigations of structural, morphological, and optical properties of solution- processed coomassie brilliant blue, CBB, thin films for photodetection applications. First, the structural and morphological features of the spin-coated CBB thin films are investigated using XRD and FESEM microscopy and yielded a polycrystalline, nanostructured, and porous CBB film of crystallite size and RMS roughness ~31.95 nm and 10.65 nm, respectively. The UV–Vis–NIR spectrophotometric measurements of transmittance and reflectance elucidated the efficient absorption and light-harvesting of the UV and visible light range with estimated indirect energy gap and Urbach energy ~1.54 eV and 22.3 meV, respectively. Next, the dispersion behavior of the fabricated thin films is analyzed in the light of the single-oscillator model estimating the detail dispersion pa- rameters. Furthermore, the dielectric function, as well as the nonlinear optical parameters, is accurately esti- mated. Subsequently, the microelectronic parameters of the engineered rectifying Ag/CBB/p-Si/Al heterojunction such as ideality factor, barrier height, series, and shunt resistances are estimated at different temperatures. The charges dynamical mechanism and the interface states density profile are analyzed, and the thermionic emission model is confirmed to fit the low bias region with a modified Richardson constant of about 34.8A/cm2 K2 .After that, the photoresponse of the implemented organic/inorganic heterojunction is checked at different illumination intensities and showed a significant stable sensitivity with fast On-Off switching behavior. The fabricated heterojunction achieved good figures of merit such as responsivity, specific detectivity, linear dynamic range, and rise/fall time of about 4.289 mA/W, 2.07 × 109 Jones, 30.36 dB, and 61.6/82.5 ms, respectively. The good and stable responsive performance of the current Ag/CBB/p-Si/Al architecture may make it a potential candidate for photodetection applications
Narrowband Near-Infrared Perovskite/Organic Photodetector: TCAD Numerical Simulation
(Multidisciplinary Digital Publishing Institute (MDPI), 2022-07) Salem, Marwa S; Shaker, Ahmed; Al-Bagawia, Amal H; Aleid, Ghada Mohamed; Othman, Mohamed S; Alshammari, Mohammad T; Fedawy, Mostafa
Narrowband photodetectors (PD) established in the near-infrared (NIR) wavelength range are highly required in a variety of applications including high-quality bioimaging. In this simulation study, we propose a filter-less narrowband PD based on the architecture of perovskite/organic het- erojunction. The most decisive part of the photodetector is the hierarchical configuration of a larger bandgap perovskite material with a thicker film followed by a lower bandgap organic material with a narrower layer. The design of the structure is carried out by TCAD numerical simulations. Our structure is based on an experimentally validated wideband organic PD, which is modified by invok- ing an additional perovskite layer having a tunable bandgap. The main detector device comprises of ITO/perovskite (CsyFA1−yPb(IxBr1−x)3 )/organic blend (PBDTTT-c:C60-PCBM)/PEDOT:PSS/Al. The simulation results show that the proposed heterojunction PD achieves satisfactory performance when the thickness of perovskite and organic layers are 2.5 µm and 500 nm, respectively. The designed photodetector achieves a narrow spectral response at 730 nm with a full width at half-maximum (FWHM) of 33 nm in the detector, while having a responsivity of about 0.12 A/W at zero bias. The presented heterojunction perovskite/organic PD can efficiently detect light in the wavelength range of 700 to 900 nm. These simulation results can be employed to drive the development of filter-less narrowband NIR heterojunction PD.
Numerical analysis and design of high performance HTL-free antimony sulfide solar cells by SCAPS-1D
(Elsevier, 07/12/2021) Salem, Marwa S; Shaker, Ahmed; Othman, Mohamed S; Al-Bagawia, Amal H; Fedawy, Mostafa; Aleid, Ghada Mohamed
Among the various absorbers encountered in thin film solar cells (TFSCs), antimony sulfide (Sb2S3) is considered a suitable candidate as it is a non-toxic and earth-abundant besides its high absorption coefficient. However, some critical issues cause its poor photovoltaic performance. These include unoptimized Sb2S3 layer, interface recombination and cell properties like the ineffective carrier collection and transport. To enhance the power conversion efficiency (PCE) of Sb2S3 solar cell, we suggest some design guidelines by employing device simulation. First, a calibration step is performed vs an experimental arrangement consists of FTO/TiO2/Sb2S3/Spiro-OMeTAD/Au to validate the simulation model. Next, as the organic hole transport material (HTM) often has poor long-term operation stability and demands high-cost fabrication processes, an HTL-free cell is proposed and designed by investigating the impact of the main technological and physical parameters. In the first step in the design of the HTL-free cell, we provide an affinity engineering methodology to tune the conduction band offset between the electron transport layer (ETL) and the absorber. Based on this approach, the most appropriate electron transport material (ETM) is chosen that fulfills the maximum efficiency. Then, an optimization routine is performed to select the most appropriate design parameters and the PCE of the optimized case is found to be about 22%. All simulations, carried out in this work, are performed by SCAPS-1D device simulator under AM1.5G illumination and 300 K temperature.