Browsing by Author "Abouelatta, M"

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Harmonizing power systems with a 13-level modified Packed U-Cells multi-level inverter: Design and implementation
(Elsevier B.V, 2024-04) Fouda, Sherouk; Salem, Marwa S; Saeed, Ahmed; Shaker, Ahmed; Abouelatta, M; Abou El-Ela, M
Traditional multilevel inverter designs often face complexity challenges, prompting the need for a simplified solution. This study introduces and evaluates the performance of a Modified Packed U-Cells (MPUC) inverter in the realm of multilevel inverter technology. The study addresses challenges associated with conventional multilevel inverters and proposes the MPUC inverter as a solution to simplify the design complexity. The MPUC inverter, utilizing three DC sources and eight switches, presents a groundbreaking thirteen-level output waveform. The primary focus lies in assessing the inverter's performance in terms of Total Harmonic Distortion (THD) and output voltage. Utilizing MATLAB/Simulink, the inverter's performance is evaluated with and without Pulse Width Modulation (PWM) strategies. The results reveal a notable reduction in THD, from 26.25% to 9.91% post-filtering when PWM is not employed. Various multi-carrier Level-Shifted PWM strategies, including PDPWM, PODPWM, APODPWM, and COPWM, are explored to enhance output waveform smoothness and efficiency. Unequal Carrier strategies, specifically UEAPDPWM and UEAPODPWM, emerge as superior in THD management at different frequency ranges. The study further incorporates real-time hardware implementation of the proposed 13-level MPUC topology, highlighting the success of the UEAPD-PWM strategy in improving waveform quality. The research aims to establish a multilevel inverter design protocol meeting international standards and emphasizes the pivotal role of PWM techniques in enhancing waveform quality. This comprehensive evaluation contributes to advancing the field of multilevel inverter technology and sets a benchmark for future research in this domain.
Identification of power PIN diode design parameters: Circuit and device-based simulation approach
(Ain Shams University, 3/13/2021) Shaker, A; Salem, M.S; Zekry, A; El-Banna, M; Sayah, G.T; Abouelatta, M
This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations. The second phase is the optimization of the diode parameters considering PSPICE circuit simulation where an electro-thermal physically based circuit model is utilized depending on a series of dynamic and static measurements. The final optimization step is carried out by using TCAD simulations. First, the diode extracted parameters are used to virtually fabricate the diode by using a process simulator. Then, using the output of the process simulator, a device simulator is used to get the desired output that is validated against experimental data. Three case studies for different power diodes are presented showing a good agreement between circuit/device simulation results and measurements. The presented methodology provides high accuracy like TCAD-based parameter extraction procedure with less time. In addition, it gives higher accuracy than the widely used circuit-based parameter extraction technique. © 2021 THE AUTHORS
Influence of base doping level on the npn microstructure solar cell performance: A TCAD study
(Elsevier B.V., 2021-11) Salem, Marwa; Zekry, A; Abouelatta, M; Alshammari, Mohammad T; Alanazi, Adwan; Al-Dhlan, Kawther A; A.Shaker, A
Optical Materials Volume 121, November 2021, 111501 Short Communication Influence of base doping level on the npn microstructure solar cell performance: A TCAD study Author links open overlay panelMarwaSalemabA.ZekrycM.AbouelattacMohammad T.AlshammaridAdwanAlanazidKawther A.Al-DhlandA.Shakere a Department of Computer Engineering, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia b Department of Electrical Communication and Electronics Systems Engineering, Faculty of Engineering, Modern Science and Arts University (MSA), Cairo, Egypt c Department of Electronics and Communications, Faculty of Engineering, Ain Shams University, Cairo, Egypt d Department of Computer science and information, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia e Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo, Egypt Received 5 April 2021, Revised 16 August 2021, Accepted 18 August 2021, Available online 24 August 2021. crossmark-logo https://doi.org/10.1016/j.optmat.2021.111501 Get rights and content Highlights • Device simulation of proposed npn microstructure solar cell was comprehensively performed. • The impact of base high doping on the device performance was fully discussed. • The results show that for NB ranging from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively. • For base doping ranging from 5×1017 cm-3 to 2×1019 cm-3, a competitive efficiency is 15.4% to 9%, respectively. Abstract Silicon industry has a mature learning curve which is the driver for 90% share of the PV market. Yet, the cost/m2 of the planar crystalline silicon solar cell is still high. To reduce the cost of silicon-based solar cells, heavily doped wafers can be used in a proposed npn microstructure in which photoexcited carries are vertically generated while the collection of carriers is accomplished in the lateral direction. In this work, we report on the influence of the heavily p + base doping concentration, Na, on the performance of the cell for different base widths. All simulations are performed by using SILVACO TCAD under AM1.5 illumination. The results show that for Na extending from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively.
A modified pseudo 2D physically-based model for double-gate TFETs: Role of precise calculations of drain and source depletion regions
(Elsevier, 7/14/2021) Yahia, Yasmin; Salem, Marwa S; Shaker, A; Kamel, H; Abouelatta, M; ElBanna, M
In this current study, a modified pseudo two-dimensional (2-D) semi-analytical model for double gate tunnel FETs (DG-TFETs) is introduced. The main regions in the DG-TFET structure are the channel and the depletion regions inside the source and the drain. In such regions, the 2-D Poisson’s equation is solved by adjusting suitable boundary conditions. The source and the drain depletion region lengths are calcu- lated precisely by an iterative technique resulting in an accurate prediction of the electrostatic potential. According to the obtained 2-D electrostatic potential, the energy band diagram could be extracted and, consequently, the minimum tunneling width is calculated. Accordingly, the model of drain current is introduced by applying Kane’s tunneling model. Further, the source depletion charge and the channel charge are derived, and the terminal capacitance components are then extracted. A comparison between the proposed model and SILVACO TCAD simulations shows a satisfactory agreement that confirms the validation of the presented model robustness. 2021 THE AUTHORS. Published by Elsevier BV on behalf of Faculty of Engineering, Ain Shams Uni- versity. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/ by-nc-nd/4.0/).
Numerical analysis of hole transport layer-free antimony selenide solar cells: Possible routes for efficiency promotion
(Elsevier, 2022-07) Salem, Marwa S; Shaker, Ahmed; Abouelatta, M; Alanazi, Adwan; Al-Dhlan, Kawther A; Almurayziq, Tariq S
Amongst the numerous absorbers confronted in thin-film solar cell technology, antimony selenide (Sb2Se3) is regarded as an extremely promising contender as it is a non-toxic and earth-abundant besides its high-level absorption coefficient. To boost the power conversion efficiency (PCE) of Sb2Se3 solar cells, we report some design recommendations by utilizing device simulation. The device model is firstly validated by calibration of an experimental cell having a configuration of FTO/CdS/Sb2Se3/Spiro-OMeTAD/Au. Then, the optimization of a hole transport layer (HTL) free structure is carried out by tuning the conduction band offset between the electron transport layer (ETL) and the Sb2Se3 absorber and by inspecting the key absorber parameters to get the maximum available power conversion efficiency. In this context, the ternary compound material ZnMgO is found to match the optimum band alignment. Moreover, the impact of ETL parameters, like thickness, doping, and surface treatment by ammonia etching, has been analyzed to understand its underlying physics and to provide possible ways for device efficiency promotion. All simulations, conducted in this paper, are accomplished by SCAPS device simulation software under standard one Sun (AM1.5G, 100 mW/cm2) illumination at 300 K.
Thirteen-level modified packed u-cell multilevel inverter for renewable-energy applications
(Institute of Electrical and Electronics Engineers Inc., 9/15/2020) Fouda, S; Salem, M.S; Saeed, A; Shaker, A; Abouelatta, M
Mushrooms have a significant role in human diet as functional food and as a nutraceutical resource. The combination of its umami flavor, protein, vitamins, minerals and carbohydrates has meant that mushrooms could be considered a cheap food source for a long time in many countries. Moreover, mushrooms contain an excellent variety of bioactive metabolites that can be successful in both prevention and treatment of various human health hazards. In addition, extracts from medicinal mushrooms and their metabolites have been verified for wound treating with contribution to different mechanisms of the healing process. This review summarizes the nutritional value and composition of mushrooms, ethnobiology and ethnopharmacology, and wound healing potential. © Copyright © 2020 Sharifi-Rad, Butnariu, Ezzat, Adetunji, Imran, Sobhani, Tufail, Hosseinabadi, Ramírez-Alarcón, Martorell, Maroyi and Martins.