dc.contributor.author |
Ali, Ahmed |
|
dc.contributor.author |
Senthikuma, , V |
|
dc.contributor.author |
Kim, Yong Soo |
|
dc.date.accessioned |
2019-11-23T12:07:57Z |
|
dc.date.available |
2019-11-23T12:07:57Z |
|
dc.date.issued |
2014 |
|
dc.identifier.citation |
Cited References in Web of Science Core Collection: 29 |
en_US |
dc.identifier.issn |
1385-3449 |
|
dc.identifier.uri |
https://link.springer.com/article/10.1007/s10832-014-9914-4 |
|
dc.description |
Accession Number: WOS:000345590800010 |
en_US |
dc.description.abstract |
Fabrication of Al0.01Ba0.99TiO3 (Al-BTO) thin films on SrTiO3/MgO/TiO2/SiO2/Si (STO/MgO) and MgO/TiO2/SiO2/Si (MgO) substrates were comparatively prepared using pulsed laser deposition (PLD). The structures of the prepared thin films were studied using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The SrTiO3 buffer layer between Al-BTO thin film and MgO substrate enhanced the ferroelectric, electrical properties. Moreover, the P-E loops showed a dramatic enhancement in the polarization values from 18 mu C/cm(2) at 600 kV/cm to 52 mu C/cm(2) at 780 kV/cm for Al-BTO thin films on SrTiO3/MgO and MgO substrates, respectively. In addition, the dielectric SrTiO3 buffer layer decreased the leakage current from 3 x 10(-3) to 12 x 10(-6) A/cm(2) and increased breakdown electric field from 10 to 30 kV/cm. The electric properties revealed that, the dielectric SrTiO3 buffer layer also decreased the conductivity, mobility and carrier concentrations. The data of Al-BTO thin films on SrTiO3/MgO substrate exhibited remarkably adjusted polarization and leakage current indicating a good ferroelectric property for non-volatile ferroelectric random access memory (FERAM) applications. |
en_US |
dc.description.sponsorship |
University of Ulsan |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
SPRINGER INTERNATIONAL PUBLISHING |
en_US |
dc.relation.ispartofseries |
OURNAL OF ELECTROCERAMICS;Volume: 33 Issue: 1-2 Pages: 47-52 |
|
dc.relation.uri |
https://cutt.ly/OeVoa7g |
|
dc.subject |
October University for Al-doped BaTiO3 |
en_US |
dc.subject |
STO buffer layer |
en_US |
dc.subject |
Ferroelectric thin film |
en_US |
dc.subject |
Pulsed laser deposition |
en_US |
dc.subject |
DIELECTRIC-PROPERTIES |
en_US |
dc.subject |
THICKNESS DEPENDENCE |
en_US |
dc.title |
The influence of SrTiO3 buffer layer on ferroelectric properties of Al-doped BaTiO3 thin films |
en_US |
dc.type |
Article |
en_US |
dc.Affiliation |
October University for modern sciences and Arts (MSA) |
|