Abstract:
Antimony selenosulfide, Sb2(S, Se)3, is regarded as an appropriate absorber to be utilized in terrestrial single
junction solar cell applications thanks to the tunability of its bandgap energy which could be adjusted around 1.3
eV. To enhance the power conversion efficiency (PCE) of Sb2(S, Se)3-based single junction solar cell, we propose
some design recommendations by using device simulation. First, in order to validate the simulation model, a
calibration step is accomplished by comparing the numerical simulation results with those of a fabricated cell
structure consisting of Au/Sb2(S, Se)3/CdS/ITO. The designed cell is formed without an organic hole transport
layer (HTL) which, generally, harmfully affects the cell by causing stability issues. Next, we investigate the
impact of the conduction band offset (CBO) between the electron transport layer (ETL) and the Sb2(S, Se)3
absorber utilizing the bandgap tunable material Cd1-xZnxS to achieve the optimum CBO. Various key design
parameters for the presented cell such as the back contact work function as well as absorber thickness and doping
concentration are also inspected. It is found that the most crucial parameter that affects the cell performance is
the CBO which could be adjusted by modifying the Zn fraction in the ternary compound Cd1-xZnxS. Moreover, a
study on the impact of the interface and bulk defects on device performance is carried out. The simulations,
conducted in this study, are accomplished by SCAPS-1D simulator at 300 K temperature and under AM1.5G
illumination.
