Influence of base doping level on the npn microstructure solar cell performance: A TCAD study

Abstract

Optical Materials Volume 121, November 2021, 111501 Short Communication Influence of base doping level on the npn microstructure solar cell performance: A TCAD study Author links open overlay panelMarwaSalemabA.ZekrycM.AbouelattacMohammad T.AlshammaridAdwanAlanazidKawther A.Al-DhlandA.Shakere a Department of Computer Engineering, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia b Department of Electrical Communication and Electronics Systems Engineering, Faculty of Engineering, Modern Science and Arts University (MSA), Cairo, Egypt c Department of Electronics and Communications, Faculty of Engineering, Ain Shams University, Cairo, Egypt d Department of Computer science and information, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia e Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo, Egypt Received 5 April 2021, Revised 16 August 2021, Accepted 18 August 2021, Available online 24 August 2021.

crossmark-logo https://doi.org/10.1016/j.optmat.2021.111501 Get rights and content Highlights • Device simulation of proposed npn microstructure solar cell was comprehensively performed.

• The impact of base high doping on the device performance was fully discussed.

• The results show that for NB ranging from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively.

• For base doping ranging from 5×1017 cm-3 to 2×1019 cm-3, a competitive efficiency is 15.4% to 9%, respectively.

Abstract Silicon industry has a mature learning curve which is the driver for 90% share of the PV market. Yet, the cost/m2 of the planar crystalline silicon solar cell is still high. To reduce the cost of silicon-based solar cells, heavily doped wafers can be used in a proposed npn microstructure in which photoexcited carries are vertically generated while the collection of carriers is accomplished in the lateral direction. In this work, we report on the influence of the heavily p + base doping concentration, Na, on the performance of the cell for different base widths. All simulations are performed by using SILVACO TCAD under AM1.5 illumination. The results show that for Na extending from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively.