Abstract:
In this current study, a modified pseudo two-dimensional (2-D) semi-analytical model for double gate
tunnel FETs (DG-TFETs) is introduced. The main regions in the DG-TFET structure are the channel and
the depletion regions inside the source and the drain. In such regions, the 2-D Poisson’s equation is solved
by adjusting suitable boundary conditions. The source and the drain depletion region lengths are calcu-
lated precisely by an iterative technique resulting in an accurate prediction of the electrostatic potential.
According to the obtained 2-D electrostatic potential, the energy band diagram could be extracted and,
consequently, the minimum tunneling width is calculated. Accordingly, the model of drain current is
introduced by applying Kane’s tunneling model. Further, the source depletion charge and the channel
charge are derived, and the terminal capacitance components are then extracted. A comparison between
the proposed model and SILVACO TCAD simulations shows a satisfactory agreement that confirms the
validation of the presented model robustness.
2021 THE AUTHORS. Published by Elsevier BV on behalf of Faculty of Engineering, Ain Shams Uni-
versity. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/
by-nc-nd/4.0/).
