Abouelatta M.Salem M.S.Shaker A.Elbanna M.Zekry A.Gontrand C.Faculty of EngineeringAin Shams UniversityCairoEgypt; Computer CollegeHail UniversityHailSaudi Arabia; Modern Science and Arts University (MSA)CairoEgypt; INSA- LyonVilleurbanneFrance; IEPUniversit� Euro-m�diterran�enne de F�sINSA- F�sF�sMorocco2020-01-092020-01-0920190250541Xhttps://doi.org/10.1007/s40009-019-00830-0PubMed ID :https://t.ly/6w1J7ScopusIn this letter, a planar integration using the deep trench isolation (DTI) technique is proposed to suppress the inter-well parasites in smart power integrated circuits implemented in 0.35��m BiCMOS technology. In this technology, all devices share the same epitaxial layer. This can lead to a punch-through between power devices as well as between power and low-voltage CMOS devices. A DTI scheme is used to suppress the effect of the parasitic BJT by using a P+ retardation implant region under the deep trench isolation region. The injection ratio of the parasitic BJT is reduced by a factor between 3 and 8.5. The effect of the trench length and the retardation implant is investigated using SENTAURUS TCAD simulations. It is confirmed, through using TCAD simulations, that the amount of the collected carriers of the sensitive devices changes as a function of the trench length and the presence of the retardation implant. � 2019, The National Academy of Sciences, India.EnglishOctober University for Modern Sciences and ArtsUniversity for Modern Sciences and ArtsMSA Universityجامعة أكتوبر للعلوم الحديثة والآداب0.35��m BiCMOS2D smart power ICsDeep trench isolationParasitic suppressionTCADArticlehttps://doi.org/10.1007/s40009-019-00830-0PubMed ID :