Ossaimee, MahmoudSalah, AhmedGamal, Salah HShaker, AhmedSalem, M.S2022-06-102022-06-1007/06/2022https://doi.org/10.1016/j.asej.2022.101848http://repository.msa.edu.eg/xmlui/handle/123456789/4961In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has been designed and simulated using a work function engineering technique. An intrinsic CNT is introduced as a channel material and a doped pocket is created between the source and the channel by utilizing an appropriate work function to boost the ON-state current of the device. Moreover, dielectric pocket engineering is applied to boost the high-frequency performance. The simulations, performed in this work, are conducted through a 2D solution of Poisson and Schrodinger equations which are done by utilizing the unbalanced Green function formalism. Simulation results demonstrate that the proposed device structure could improve the ON-current, cut-off frequency, and achieve a low subthreshold swing (SS) value which makes it suitable for low power applications. Additionally, the presented structure could also eliminate ambipolar conduction.en-USTunnelingCNTTFETElectrostatic DopingWork function engineeringDielectric engineeringArticlehttps://doi.org/10.1016/j.asej.2022.101848