Browsing by Author "Salem, M.S"

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Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering
(Ain Shams University, 07/06/2022) Ossaimee, Mahmoud; Salah, Ahmed; Gamal, Salah H; Shaker, Ahmed; Salem, M.S
In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has been designed and simulated using a work function engineering technique. An intrinsic CNT is introduced as a channel material and a doped pocket is created between the source and the channel by utilizing an appropriate work function to boost the ON-state current of the device. Moreover, dielectric pocket engineering is applied to boost the high-frequency performance. The simulations, performed in this work, are conducted through a 2D solution of Poisson and Schrodinger equations which are done by utilizing the unbalanced Green function formalism. Simulation results demonstrate that the proposed device structure could improve the ON-current, cut-off frequency, and achieve a low subthreshold swing (SS) value which makes it suitable for low power applications. Additionally, the presented structure could also eliminate ambipolar conduction.
Identification of power PIN diode design parameters: Circuit and device-based simulation approach
(Ain Shams University, 3/13/2021) Shaker, A; Salem, M.S; Zekry, A; El-Banna, M; Sayah, G.T; Abouelatta, M
This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations. The second phase is the optimization of the diode parameters considering PSPICE circuit simulation where an electro-thermal physically based circuit model is utilized depending on a series of dynamic and static measurements. The final optimization step is carried out by using TCAD simulations. First, the diode extracted parameters are used to virtually fabricate the diode by using a process simulator. Then, using the output of the process simulator, a device simulator is used to get the desired output that is validated against experimental data. Three case studies for different power diodes are presented showing a good agreement between circuit/device simulation results and measurements. The presented methodology provides high accuracy like TCAD-based parameter extraction procedure with less time. In addition, it gives higher accuracy than the widely used circuit-based parameter extraction technique. © 2021 THE AUTHORS
Investigation of gate leakage current in TFET: A semi-numerical approach
(Alexandria University, 2023-04) Tawfik, N.M.S; Shaker, A; Sayed, I; Kamel, H; Salem, M.S; Dessouky, M; Fedawy, M
Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace con- ventional MOSFETs in low-power applications. However, there are many challenges that should be overcome to efficiently operate the TFET. One of the most limiting factors that can restrict the TFET performance is the gate leakage current. In this paper, the tunneling leakage current through the gate oxide of double gate TFET has been analyzed. The conduction band energy level for gate- oxide-silicon was employed to calculate the tunneling transmission coefficient by utilizing a numer- ical method. To obtain the potential barrier between the gate and the channel surface, a modified analytical pseudo-2D method has been applied to deduce the corresponding surface potential taking into account a precise calculation of depletion regions. Furthermore, the inclusion of the image charge barrier lowering effect is incorporated in calculating the transmission probability through the oxide. Including such an effect shows a significant influence on determining the gate tunneling current. The gate leakage current has been calculated for various bias voltages and equivalent oxide thicknesses. The presented semi-numerical technique shows good agreement within a suitable CPU time when validated and compared against full numerical TCAD simulation. 2023 The Authors. Published by Elsevier B.V. on behalf of Faculty of Engineering, Alexandria University
Thirteen-level modified packed u-cell multilevel inverter for renewable-energy applications
(Institute of Electrical and Electronics Engineers Inc., 9/15/2020) Fouda, S; Salem, M.S; Saeed, A; Shaker, A; Abouelatta, M
Mushrooms have a significant role in human diet as functional food and as a nutraceutical resource. The combination of its umami flavor, protein, vitamins, minerals and carbohydrates has meant that mushrooms could be considered a cheap food source for a long time in many countries. Moreover, mushrooms contain an excellent variety of bioactive metabolites that can be successful in both prevention and treatment of various human health hazards. In addition, extracts from medicinal mushrooms and their metabolites have been verified for wound treating with contribution to different mechanisms of the healing process. This review summarizes the nutritional value and composition of mushrooms, ethnobiology and ethnopharmacology, and wound healing potential. © Copyright © 2020 Sharifi-Rad, Butnariu, Ezzat, Adetunji, Imran, Sobhani, Tufail, Hosseinabadi, Ramírez-Alarcón, Martorell, Maroyi and Martins.