Browsing by Author "Alanazi, Adwan"

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Analysis of Hybrid Hetero-Homo Junction Lead-Free Perovskite Solar Cells by SCAPS Simulator
(MDPI, 09/12/2021) Salem, Marwa. S; Shaker, Ahmed; Zekry, Abdelhalim; Abouelatta, Mohamed; Alanazi, Adwan; Alshammari, Mohammad T; Gontand, Christian
In this work, we report on the effect of substituting the active intrinsic i-layer on a conventional pin structure of lead-free perovskite solar cell (PSC) by a homo p-n junction, keeping the thickness of the active layer constant. It is expected that when the active i-layer is substituted by a p-n homo junction, one can increase the collection efficiency of the photo-generated electrons and holes due to the built-in electric field of the homo junction. The impact of the technological and physical device parameters on the performance parameters of the solar cell have been worked out. It was found that p-side thickness must be wider than the n-side, while its acceptor concentration should be slightly lower than the donor concentration of the n-side to achieve maximum efficiency. In addition, different absorber types, namely, i-absorber, n-absorber and p-absorber, are compared to the proposed pn-absorber, showing a performance-boosting effect when using the latter. Moreover, the proposed structure is made without a hole transport layer (HTL) to avoid the organic issues of the HTL materials. The back metal work function, bulk trap density and ETL material are optimized for best performance of the HTL-free structure, giving Jsc = 26.48, Voc = 0.948 V, FF = 77.20 and PCE = 19.37% for AM1.5 solar spectra. Such results highlight the prospective of the proposed structure and emphasize the importance of using HTL-free solar cells without deteriorating the efficiency. The solar cell is investigated by using SCAPS simulator.
Bandwidth Broadening of Piezoelectric Energy Harvesters Using Arrays of a Proposed Piezoelectric Cantilever Structure
(MDPI AG, 8/17/2021) Salem, Marwa S; Ahmed, Shimaa; Shaker, Ahmed; Alshammari, Mohammad T; Al-Dhlan, Kawther A; Alanazi, Adwan; Saeed, Ahmed; Abouelatta, Mohamed
One of the most important challenges in the design of the piezoelectric energy harvester is its narrow bandwidth. Most of the input vibration sources are exposed to frequency variation during their operation. The piezoelectric energy harvester’s narrow bandwidth makes it difficult for the harvester to track the variations of the input vibration source frequency. Thus, the harvester’s output power and overall performance is expected to decline from the designed value. This current study aims to solve the problem of the piezoelectric energy harvester’s narrow bandwidth. The main objective is to achieve bandwidth broadening which is carried out by segmenting the piezoelectric material of the energy harvester into n segments; where n could be more than one. Three arrays with two, four, and six beams are shaped with two piezoelectric segments. The effect of changing the length of the piezoelectric material segment on the resonant frequency, output power, and bandwidth, as well as the frequency response is investigated. The proposed piezoelectric energy harvesters were implemented utilizing a finite element method (FEM) simulation in a MATLAB environment. The results show that increasing the number of array beams increases the output power and bandwidth. For the three-beam arrays, at n equals 2, 6 mW output power and a 9 Hz bandwidth were obtained. Moreover, the bandwidth of such arrays covered around 5% deviation from its resonant frequency. All structures were designed to operate as a steel wheel safety sensor which could be used in train tracks. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Comprehensive design and analysis of thin film Sb2S3/CIGS tandem solar cell: TCAD simulation approach
(IOP Publishing Ltd, 2024-06) Salem, Marwa S; Shaker, Ahmed; Aledaily, Arwa N; Alanazi, Adwan; Al-Dhlan, Kawther A; Okil, Mohamed
This research presents a design and analysis of a tandem solar cell, combining thin film wide bandgap Sb2S3 (1.72 eV) and narrow bandgap CIGS (1.15 eV) for the top and bottom sub-cells, respectively. The integration of all thin film layers enhances flexibility, rendering the tandem solar cell suitable for applications such as wearable electronics. To optimize the power conversion efficiency (PCE) of the tandem solar device, advanced technology computer-aided design (TCAD) simulation tools are employed to estimate loss mechanisms and fine-tune parameters for each layer. An experimentally validated optoelectronic model is introduced, calibrated and validated against fabricated reference solar cells for the individual top and bottom cells. The calibrated model is then utilized to propose optimization routines for the Sb2S3/CIGS tandem solar cell. The initial tandem cell exhibits a JSC of 15.72 mA cm−2 and a PCE of 15.36%. The efficiency drop in the tandem configuration is identified primarily in the top cell. A systematic optimization process for the top cell is initiated, exploring various configurations, including HTL-free and ETL-free setups. Moreover, an np homojunction structure for the top cell is proposed. Optimization routines are applied that involve determining optimal thickness and doping concentration of the n-layer, investigating the effect of p-layer doping concentration, and exploring the influence of the work function of the front contact. As a result, the tandem cell efficiency is significantly improved to 23.33% at the current matching point (CMP), with a J SC of 17.15 mA cm−2. The findings contribute to the advancement of thin-film tandem solar cell technology, showcasing its potential for efficient and flexible photovoltaic applications .
Elucidation the effectiveness of acridine orange as light-harvesting layer for photosensing applications: Structural, spectroscopic and electrical investigations
(Elsevier, 2022-11) Salem, Marwa S; Wassel, Ahmed R; Fedawy, M; Shaker, A; Al-Bagawia, Amal H; Alanazi, Adwan; El-Mahalawy, Ahmed M
In this research, acridine orange, AO, bio-photosensitive thin films are prepared using vacuum thermal evapo- ration technique for optoelectronic applications. First, the crystal structure of the deposited films compared to powder is investigated using the XRD technique. Next, the surface morphology of the deposited AO thin film is characterized using the FESEM technique giving rise to a uniform, homogeneous, and granular polycrystalline film. The amplitude and spatial roughness parameters of the film are estimated. Furthermore, the optical properties of the deposited AO thin film are spectrophotometrically characterized in the range from UV to NIR. The recorded absorbance, transmittance, and reflectance showed high UV and visible absorption characteristics with a direct energy gap of ~2.238 eV. The optical constants, including refractive index and extinction coeffi- cient, are found, and the dispersion behavior is analyzed using the one-oscillator model for estimating the oscillator and dispersion energies. The dielectric function and dielectric relaxation time of AO thin film are interpreted in detail. In addition, an organic/inorganic heterogeneous junction based on Ag/AO/p-Si/Al is fabricated and electrically evaluated using the current-voltage relation. The fabricated heterojunction shows a rectification behavior of ideality factor, barrier height, and rectification ratio ~2.09, 0.707 eV, and 176, respectively. The charges dynamics mechanism in terms of band diagram and the density of interface states profile are analyzed. Eventually, the photoresponse of the engineered heterojunction is evaluated under the illumination of intensities that varies from 20 mW/cm2 to 100 mW/cm2 . The fabricated photosensor showed a high stable performance with responsivity, specific detectivity, linear dynamic range, and ON/OFF ratio of about 68.4 mA/W, 1.11 × 1010 Jones, 69.3 dB, and 108.4, respectively. The photoresponse performance of the present device is considered more efficient and stable than many other organic/inorganic photosensors.
Influence of base doping level on the npn microstructure solar cell performance: A TCAD study
(Elsevier B.V., 2021-11) Salem, Marwa; Zekry, A; Abouelatta, M; Alshammari, Mohammad T; Alanazi, Adwan; Al-Dhlan, Kawther A; A.Shaker, A
Optical Materials Volume 121, November 2021, 111501 Short Communication Influence of base doping level on the npn microstructure solar cell performance: A TCAD study Author links open overlay panelMarwaSalemabA.ZekrycM.AbouelattacMohammad T.AlshammaridAdwanAlanazidKawther A.Al-DhlandA.Shakere a Department of Computer Engineering, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia b Department of Electrical Communication and Electronics Systems Engineering, Faculty of Engineering, Modern Science and Arts University (MSA), Cairo, Egypt c Department of Electronics and Communications, Faculty of Engineering, Ain Shams University, Cairo, Egypt d Department of Computer science and information, Computer Science and Engineering College, University of Ha'il, Ha'il, Saudi Arabia e Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo, Egypt Received 5 April 2021, Revised 16 August 2021, Accepted 18 August 2021, Available online 24 August 2021. crossmark-logo https://doi.org/10.1016/j.optmat.2021.111501 Get rights and content Highlights • Device simulation of proposed npn microstructure solar cell was comprehensively performed. • The impact of base high doping on the device performance was fully discussed. • The results show that for NB ranging from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively. • For base doping ranging from 5×1017 cm-3 to 2×1019 cm-3, a competitive efficiency is 15.4% to 9%, respectively. Abstract Silicon industry has a mature learning curve which is the driver for 90% share of the PV market. Yet, the cost/m2 of the planar crystalline silicon solar cell is still high. To reduce the cost of silicon-based solar cells, heavily doped wafers can be used in a proposed npn microstructure in which photoexcited carries are vertically generated while the collection of carriers is accomplished in the lateral direction. In this work, we report on the influence of the heavily p + base doping concentration, Na, on the performance of the cell for different base widths. All simulations are performed by using SILVACO TCAD under AM1.5 illumination. The results show that for Na extending from 5 × 1017 cm−3 to 2 × 1019 cm−3, the cell could achieve a competitive efficiency, from 15.4% to 9%, respectively.
Numerical analysis of hole transport layer-free antimony selenide solar cells: Possible routes for efficiency promotion
(Elsevier, 2022-07) Salem, Marwa S; Shaker, Ahmed; Abouelatta, M; Alanazi, Adwan; Al-Dhlan, Kawther A; Almurayziq, Tariq S
Amongst the numerous absorbers confronted in thin-film solar cell technology, antimony selenide (Sb2Se3) is regarded as an extremely promising contender as it is a non-toxic and earth-abundant besides its high-level absorption coefficient. To boost the power conversion efficiency (PCE) of Sb2Se3 solar cells, we report some design recommendations by utilizing device simulation. The device model is firstly validated by calibration of an experimental cell having a configuration of FTO/CdS/Sb2Se3/Spiro-OMeTAD/Au. Then, the optimization of a hole transport layer (HTL) free structure is carried out by tuning the conduction band offset between the electron transport layer (ETL) and the Sb2Se3 absorber and by inspecting the key absorber parameters to get the maximum available power conversion efficiency. In this context, the ternary compound material ZnMgO is found to match the optimum band alignment. Moreover, the impact of ETL parameters, like thickness, doping, and surface treatment by ammonia etching, has been analyzed to understand its underlying physics and to provide possible ways for device efficiency promotion. All simulations, conducted in this paper, are accomplished by SCAPS device simulation software under standard one Sun (AM1.5G, 100 mW/cm2) illumination at 300 K.
Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD
(Hindawi, 2/19/2021) Salem, Marwa S.; Saif, Omar M.; Shaker, Ahmed; Abouelatta, Mohamed; Alzahrani, Abdullah J.; Alanazi, Adwan; Elsaid, M. K.; Ramadan, Rabie A.
Article Sections Research Article | Open Access Volume 2021 |Article ID 8842975 | https://doi.org/10.1155/2021/8842975 Marwa S. Salem, Omar M. Saif, Ahmed Shaker, Mohamed Abouelatta, Abdullah J. Alzahrani, Adwan Alanazi, M. K. Elsaid, Rabie A. Ramadan, "Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD", International Journal of Photoenergy, vol. 2021, Article ID 8842975, 12 pages, 2021. https://doi.org/10.1155/2021/8842975 Hide citation Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD Marwa S. Salem ,1,2 Omar M. Saif,3 Ahmed Shaker ,4 Mohamed Abouelatta ,5 Abdullah J. Alzahrani,1 Adwan Alanazi ,1 M. K. Elsaid,5 and Rabie A. Ramadan 1,6 1Department of Computer Engineering, College of Computer Science and Engineering, University of Ha’il, Ha’il, Saudi Arabia 2Department of Electrical Communication and Electronics Systems Engineering, Faculty of Engineering, Modern Science and Arts University (MSA), Cairo, Egypt 3Canadian International College, Engineering School, Giza, Egypt 4Engineering Physics and Mathematics Department, Faculty of Engineering, Ain Shams University, Cairo, Egypt 5Department of Electronics and Communications, Faculty of Engineering, Ain Shams University, Cairo, Egypt 6Department of Computer Engineering, Faculty of Engineering, Cairo University, Cairo, Egypt Show less Academic Editor: Elias Stathatos Published 19 Feb 2021 Abstract In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: , , , and the conversion efficiency () equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are , , , and . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.